OST Photonics offers a wide selection of silicon wafers for semiconductor industry. The wafer diameters are ranging from 2 inch (50.8mm) to 12 inch (300mm), and there are three crystal orientations to choose from: <100>, <111> and <110>, the thickness can also be customized according to your requirements. In addition, oxide silicon wafers, customized silicon substrates and silicon ingots are also available upon request.
Integrated circuits
Semiconductor device
Consumer electronics
Solar cell substrate
Low cost
Safe and non-toxic
Excellent machinability
Large size available
Orientation:<100>,<111>,<110>, etc.
Dimension: 2”, 3”, 4”, 5”, 6”, 8”, 12”, 5x5mm, 10x10mm, 20x20mm etc.
Thickness: 279 μm, 380 μm, 525 μm, 625 μm, 675 μm, 725 μm, 775 μm, 500 μm, 1000 μm etc.
Available items: Czochralski (CZ) wafers, Float Zone (FZ) wafers, oxide wafers, substrates, ingots and customized optics.
Item | Specifications | ||||||
Diameter | 2" | 3" | 4" | 5" | 6" | 8" | 12" |
Grade | Prime grade, Test grade, Dummy grade | ||||||
Growth Method | CZ | ||||||
Orientation | <100>,<111>,<110>, etc. | ||||||
Type/Dopant | P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | ||||||
Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 | 775 |
Thickness Tolerance | Standard ±25um, Maximum Capabilities ±5um | ± 20um | ± 20um | ||||
Resistivity(Ohm-cm) | 0.001-100 | ||||||
Surface Finished | Polished/Etched, Polished/Polished, Etched/Etched, Ground/Ground | ||||||
TTV (um) | Standard < 10um, Maximum Capabilities<5um | ||||||
Bow/Warp (um) | Standard < 40um, Maximum Capabilities<20um | <40um | <40um | ||||
Particle | <10@0.5um; <10@0.3um; <10@0.2um | ||||||
Item | Specifications | |||||
Diameter | 2" | 3" | 4" | 5" | 6" | 8" |
Grade | Prime grade, Test grade, Dummy grade | |||||
Growth Method | FZ | |||||
Orientation | <100>,<111>, etc. | |||||
Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos | |||||
Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 |
Thickness Tolerance | Standard ±25um | ± 50um | ||||
Resistivity(Ohm-cm) | 1000-30000 and 1-5 | |||||
Surface Finished | Polished/Etched, Polished/Polished, Etched/Etched, Ground/Ground | |||||
TTV (um) | Standard < 10um | |||||
Bow/Warp (um) | Standard < 40um | <50um | ||||
Particle | <10@0.3um | |||||
Item | Specifications | ||||||||
Diameter | 2" | 3" | 4" | 5" | 6" | 8” | 12” | ||
Grade | Prime grade, Test grade, Dummy grade | ||||||||
Growth Method | CZ, FZ | ||||||||
Orientation | <100>,<111>,<110>, etc. | ||||||||
Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | ||||||||
Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 | 775 | ||
Thickness Tolerance | Standard ±25um, Maximum Capabilities ±5um | ± 20um | ± 20um | ||||||
Oxide Thickness (nm) | 20-2000 | ||||||||
Resistivity(Ohm-cm) | 0.001-30000 | ||||||||
Surface Finished | Polished/Etched, Polished/Polished | ||||||||
TTV (um) | Standard < 10um, Maximum Capabilities<5um | ||||||||
Bow/Warp (um) | Standard < 40um, Maximum Capabilities<20um | <40um | <40um | ||||||
Particle | <10@0.5um; <10@0.3um; <10@0.2um | ||||||||
Item | Specifications | |||||
Diameter | 2" | 3" | 4" | 5" | 6" | 8" |
Grade | Prime grade, Test grade, Dummy grade | |||||
Growth Method | CZ, FZ | |||||
Orientation | <100>,<111>,<110>, etc. | |||||
Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | |||||
Oxygen Content | 8-18 ppma | |||||
Carbon Content | >1 ppma | |||||
Resistivity(Ohm-cm) | 0.001-30000 ohm-cm | |||||
Life Time | >50us | |||||
