GaSb single crystals can be used as substrate materials because of their lattice constants matching the lattice constants of various ternary and quaternary, III-V compound solid solutions with band gaps in the 0.8~4.3um wide spectral range. The limited mobility of GaSb lattice is greater than that of GaAs, making it a potential application prospect in the manufacture of microwave devices. Growth methods include LEC, VGF and VBG.
OST Photonics offer 2”, 3” GaSb wafers for semiconductor industry. There are three types of GaSb materials for you to choose from: undoped GaSb, N-type GaSb (Te doped) and P-type GaSb (Zn doped). The thickness can be customized according to your requirements. In addition, customized GaSb substrates are also available upon requests.
