OST Photonics offer a variety of sizes and thicknesses of SAW grade Quartz single crystal wafers, with wafer diameters ranging from 1 inch to 4 inch, the thickness can be customized according to your requirements (generally above 0.05 mm). The orientations can be X/Y/Z-cut etc. In addition, high quality quartz blanks (including left handed quartz) are also available.
Optical low-pass filters for digital cameras
Polarizers and polarifiers in optical instruments
Optical isolator and optical fiber coupler in optical fiber communication
Semiconductor and microelectronics
Wide light transmission range
Good optical uniformity
Corrosion resistance
Superior light transmission
Super high insulation
High-temperature resistance
Orientations: X/Y/Z-cut etc.
Diameter: 1”, 2”, 3”, 4”
Thickness: 0.2 mm, 0.5 mm, 1.0 mm etc.
Available items: crystal wafers, blanks and customized optics
Material | Quartz Crystal | |
Cutting Angle | X/Y/Z-cut etc | |
Diameter | 1”(25.4mm)~4”(100mm) | |
Diameter Tolerance(±) | ≤0.20 mm | |
Thickness | 0.05mm or more | |
LTV (5mmx5mm) | <1µm | |
TTV | <3µm | |
Bow | -30<bow<30 | |
Warp | <40µm | |
Surface Type | Single side polished(SSP)/double sides polished(DSP) | |
Polished side Ra | <0.5nm | |
Back Side Criteria | General is 0.2-0.5µm or as customized | |
Scratch/Dig | Bette than 40/20 | |
Edge Criteria | Compliant with SEMI M1.2 Standard/refer to IEC62276 | |
Material Property | ECD | Better than grade 4 |
Inclusion | Better than grade I | |
Q-Value | Better than grade C | |
Wafer Surface Criteria | Particles φ>0.3 µm | <= 30 |
Scratch , Chipping | None | |
Defect | No edge cracks, scratches, saw marks, stains | |
Packaging | Qty/Wafer box | 25pcs per box |
Material | Grade | Dimension | Inclusion | Q-value | Optical homogeneity |
Quartz | Optical | Z: 135mm X: 150mm Y: 240-280mm | IEC Class I | >2.40 million | 1*10^-5 |
Quartz | Laser | Z<40mm X<110mm Y< 200mm | Better than IEC Claas IA | >2.40 million | 5*10^-6 |
Density, g/cm3 | 2.65 |
Melting point, °C | 1467 |
Thermal conductivity, W/(m x K) (T = 25°C) | 10.7 (parallel to axis Z) 6.2 (perpendicular to axis Z) |
Thermal coefficient of linear expansion at temperature range 0-25°Ñ, °C-1 | 7.1 õ 10-6 (parallel to axis Z) |
13.2 õ 10-6 (perpendicular to axis Z) | |
Hardness (Mohs) | 7 |
Specific heat capacity, J/(kg x K) (T = 25°C) | 710 |
Dielectric constant at 30 MHz | 4.34 (parallel to axis Z) 4.27 (perpendicular to axis Z) |
Young's modulus (E), GPa | 97.2 (parallel to axis Z) 76.5 (perpendicular to axis Z) |
Shear modulus (G), GPa | 31.14 |
Bulk modulus (K), GPa | 36.4 |
Chemical stability | insoluble in water |
Elastic coefficients | C11=87 C12=7 C44=58 C13=13 C14=18 C33=106 |
l, mm | n0 | ne | l, mm | n0 | ne | l, mm | n0 | ne |
0.185 | 1.676 | 1.69 | 0.243 | 1.605 | 1.617 | 0.589 | 1.544 | 1.553 |
0.194 | 1.66 | 1.673 | 0.263 | 1.593 | 1.604 | 1.083 | 1.534 | 1.543 |
0.204 | 1.643 | 1.656 | 0.291 | 1.581 | 1.591 | 1.8 | 1.524 | 1.532 |
0.219 | 1.625 | 1.637 | 0.34 | 1.567 | 1.577 | 2.5 | 1.512 | 1.52 |
0.231 | 1.614 | 1.626 | 0.405 | 1.557 | 1.567 | 3 | 1.5 | 1.507 |
a) The amount of crystal defect and impurity in synthetic quartz crystal depends on growth rate, mineralizer and raw material. The growth rate affects greatly to the important properties such as infra-red absorption coefficient α, which correlates to Q value, and frequency –temperature characteristics. The larger growth rate causes increase in α, decrease in Q value, and dispersion in frequency-temperature characteristics.
b) The quality index of synthetic quartz crystal was originally a Q value, and a 5 MHz quartz crystal unit operated in 5th overtone mode was used to obtain the Q value. But it required laborious work to fabricate the 5 MHz crystal unit, so the index had been changed to the coefficient α instead of the Q value.
a) Twinning: There shall be no electrical or optical twinning in the usable region.
b) Strain: There shall be no strain contained both inside and surface of seed crystal as well as in a grown quartz crystal.
c) Cracks and fractures: There shall be no cracks, chippings or fractures in the usable region.
d) Inclusion density: The specification is in accordance with the IEC 60758.
Size range | Qty per cm3 | |||
Grade (µm) | 10 to 30 | 30 to 70 | 70 to 100 | >100 |
Ia | 2 | 1 | 0 | 0 |
Ib | 3 | 2 | 1 | 1 |
I | 6 | 4 | 2 | 2 |
II | 9 | 5 | 4 | 3 |
III | 12 | 8 | 6 | 4 |
e) Infra-red quality indication: The specification is in accordance with the IEC 60758.
Grade | Max. α3585 | Estimated Q values (x 106) |
A | 0.015 | 3.8 |
A | 0.024 | 3 |
B | 0.05 | 2.4 |
C | 0.069 | 1.8 |
D | 0.1 | 1.4 |
f) Etch channel density: The specification is in accordance with the IEC 60758.
Grade | Max. number per cm3 |
1 | 10 |
2 | 30 |
3 | 100 |
4 | 300 |
5 | 600 |
a) Angles:
i. Rotation angle of X-surface around Y-axis: 00°00’±15’
ii. Rotation angle of X-surface around Z-axis: 00°00’±15’
b) Dimensional tolerance:
i. Along X or Z axis:±0.1 mm
ii. Along Y axis:±10 mm
c) Surface roughness: as customized, lapped and polished are both available.
