With InAs single crystal substrate, InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown to produce infrared light-emitting devices with wavelengths of 2-14μm. InAs single crystal substrates can also be used to epitaxially grow AlGaSb superlattice structure materials. Mid-infrared quantum cascade laser. These infrared devices have good application prospects in gas monitoring, low-loss optical fiber communications and other fields. In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices. As a single crystal substrate, InAs materials need to have low dislocation density, good lattice integrity, appropriate electrical parameters and high uniformity. The main growth method of InP single crystal materials is the traditional liquid-sealed Czochralski technology (LEC).
OST Photonics offers high quality InAs substrates for researchers and industries. There are four types of InAs materials for you to choose from: N-type InAs (undoped), N-type InAs (Sn doped), N-type InAs (S doped) and P-type InAs (Zn doped). Crystal orientation, size and thickness can be customized according to your requirements.
